View STP80N6F6_8208874.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

this is information on a product in full production. january 2014 docid023470 rev 2 1/12 STP80N6F6 automotive-grade n-channel 60 v, 4.4 m ? typ., 80 a stripfet? vi deepgate? power mosfet in a to-220 package datasheet - production data figure 1. internal schematic diagram features ? designed for automotive applications and aec-q101 qualified ? low gate charge ? very low on-resistance ? high avalanche ruggedness applications ? switching applications description this device is an n-channel power mosfet developed using the 6 th generation of stripfet? deepgate? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. to-220 1 2 3 tab $0y '7$% * 6 order code v ds r ds(on) max. i d STP80N6F6 60 v 5 m 80 a (1) 1. current limited by package table 1. device summary order code marking packages packaging STP80N6F6 80n6f6 to-220 tube www.st.com
contents STP80N6F6 2/12 docid023470 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
docid023470 rev 2 3/12 STP80N6F6 electrical ratings 12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 60 v v gs gate-source voltage 20 v i d (1) 1. current limited by package drain current (continuous) at t c = 25 c 80 a i d (1) drain current (continuous) at t c = 100 c 80 a i dm (1) drain current (pulsed) 320 a p tot total dissipation at t c = 25 c 120 w derating factor 0.8 w/c t stg storage temperature - 55 to 175 c t j operating junction temperature table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 1.25 c/w r thj-a thermal resistance junction-ambient max 62.5 c/w
electrical characteristics STP80N6F6 4/12 docid023470 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 250 a60 v i dss zero gate voltage drain current (v gs = 0) v ds = 60 v 1 a v ds = 60 v, t c =125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a3 4.5v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 40 a 4.4 5 m table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 8325 - pf c oss output capacitance - 500 - pf c rss reverse transfer capacitance -400-pf q g total gate charge v dd = 30 v, i d = 80 a, v gs = 10 v -147-nc q gs gate-source charge - 44 - nc q gd gate-drain charge - 46 - nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 30 v, i d = 40 a r g =4.7 v gs = 10 v -40-ns t r rise time 71 ns t d(off) turn-off-delay time - 132 - ns t f fall time - 40 - ns
docid023470 rev 2 5/12 STP80N6F6 electrical characteristics 12 table 7. source drain diode symbol parameter test conditions min. typ. max unit i sd source-drain current - 80 a i sdm (1) 1. current limited by package. source-drain current (pulsed) - 320 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 80 a, v gs = 0 - 1.3 v t rr reverse recovery time i sd = 80 a, v dd = 48 v di/dt = 100 a/ s, t j = 150 c -46 ns q rr reverse recovery charge - 65 nc i rrm reverse recovery current - 2.8 a
electrical characteristics STP80N6F6 6/12 docid023470 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10ms 1ms 100s tj=175c tc=25c single pulse 100 am17950v1 i d 250 150 50 0 0 2 v ds (v) 4 (a) 6 350 5v 6v v gs =8, 9, 10v 100 200 300 8 7v am17951v1 i d 300 200 100 0 0 4 v gs (v) 8 (a) 2 6 10 50 150 250 350 v ds =3v am17952v1 v gs 6 4 2 0 0 100 q g (nc) (v) 8 150 10 v dd =30v i d =80a 12 50 am17953v1 r ds(on) 4.0 2.0 0.0 0 20 i d (a) (m ) 10 30 6.0 v gs =10v 40 50 8.0 10.0 60 70 am17954v1
docid023470 rev 2 7/12 STP80N6F6 electrical characteristics 12 figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on-resistance vs temperature figure 11. normalized v ds vs temperature figure 12. source-drain diode forward characteristics c 1000 100 0 40 v ds (v) (pf) 20 60 ciss coss crss am17955v1 v gs(th) 0.6 0.4 0.2 0 -75 t j (c) (norm) 1.2 75 25 -25 125 i d =250a 0.8 1 am17956v1 r ds(on) 2 1 0 t j (c) (norm) 0.5 1.5 -75 75 25 -25 125 am17957v1 i d =40a v ds t j (c) (norm) 0.9 0.95 1 1.05 1.1 i d =1ma -75 75 25 -25 125 am17958v1 v sd 0 40 i sd (a) (v) 20 60 80 0 0.2 0.4 0.6 t j =-50c t j =150c t j =25c 0.8 1 am17959v1
package mechanical data STP80N6F6 8/12 docid023470 rev 2 3 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid023470 rev 2 9/12 STP80N6F6 package mechanical data 12 figure 13. to-220 type a drawing bw\sh$b5hyb7
package mechanical data STP80N6F6 10/12 docid023470 rev 2 table 8. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
docid023470 rev 2 11/12 STP80N6F6 revision history 12 4 revision history table 9. document revision history date revision changes 08-aug-2012 1 initial release. 21-jan-2014 2 ? document status promoted from preliminary to production data ? modified: title ? modified: features ? added: note 1 in cover page ? modified: r ds(on)max and i d values in cover page ? modified: i d (at tc = 25 c and at tc = 100 c) values, i d , i dm values and added note 1 in table 2 ? modified: r thj-case value in table 3 ? modified: r ds(on) values in table 4 ? modified: i d and the entire typical values in table 5 , 6 and 7 ? added: section 2.1: electrical characteristics (curves) ? updated: section 3: package mechanical data ? minor text changes
STP80N6F6 12/12 docid023470 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

▲Up To Search▲

Price & Availability of STP80N6F6

	To Download STP80N6F6 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .